FDMS86200DC - ON Semiconductor

FDMS86200DC N-Channel MOSFET

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Shielde.

Features

• Shielded Gate MOSFET Technology
• DUAL COOL® Top Side Cooling DFN8 Package
• Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A
• Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A
• High Performance Technology for Extremely Low rDS(on)
• 100% UIL Tested
• RoHS Compliant Applications
• Primary MOSFET in DC − DC Converters
• Secondary Synchronous Rectifier
• Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25°C 40 Continuous, TA = 2.