FDMS86255ET150 - Fairchild Semiconductor

FDMS86255ET150 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ OringFET / Load Switching „ Synchronous rectification „ DC-DC Conversion Top Pin 1 Bottom S Pi.

Features

„ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistan.