FDMS8622 |
Part Number | FDMS8622 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching perfo... |
Features |
Shielded Gate MOSFET Technology Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications P... |
Document |
FDMS8622 Data Sheet
PDF 571.86KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMS86200 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDMS86200DC |
Fairchild Semiconductor |
MOSFET | |
4 | FDMS86200DC |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDMS86201 |
Fairchild Semiconductor |
N-Channel MOSFET |