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FDMS86202ET120 |
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| Part Number | FDMS86202ET120 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance ... |
| Features |
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Co... |
| Document |
 FDMS86202ET120 Data Sheet
PDF 231.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS86202 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMS86200 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMS86200DC |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDMS86200DC |
ON Semiconductor |
N-Channel MOSFET |
|