FDMS86201 |
Part Number | FDMS86201 |
Manufacturer | Fairchild Semiconductor |
Description | Shielded Gate MOSFET Technology Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon combination for low rDS(on) and h... |
Features |
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design 100% UIL tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Top
Bottom
Pin 1... |
Document |
FDMS86201 Data Sheet
PDF 363.23KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMS86200 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDMS86200DC |
Fairchild Semiconductor |
MOSFET | |
4 | FDMS86200DC |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDMS86202 |
Fairchild Semiconductor |
MOSFET |