EPC2206 - EPC

EPC2206 Power Transistor

eGaN® FET DATASHEET EPC2206 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 2.2 mΩ ID , 90 A AEC-Q101 D G S EPC2206 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode pro.

Features

1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2206 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 6.05 x 2.3 mm Applications
• 48 V Automotive Power
• Open Rack Server Architectures
• High Power Density DC-DC Converters
• Isolated Power Supplies
• Class D Audio
• Low Inductance Motor Drive Benefits
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