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eGaN® FET DATASHEET EPC2203 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VRDDSS(,on8)0, V 80 mΩ IADE,C-1Q.710A1 G D S EPC2203 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provid.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EPC2202 |
EPC |
Power Transistor |
|
| 2 | EPC2204 |
EPC |
Power Transistor |
|
| 3 | EPC2206 |
EPC |
Power Transistor |
|
| 4 | EPC2207 |
EPC |
Power Transistor |
|
| 5 | EPC2212 |
EPC |
Power Transistor |
|
| 6 | EPC2214 |
EPC |
Power Transistor |
|
| 7 | EPC2215 |
EPC |
Power Transistor |
|
| 8 | EPC2 |
Altera Corporation |
Configuration Devices |
|
| 9 | EPC20 |
ACME |
EPC Cores |
|
| 10 | EPC2001 |
EPC |
Power Transistor |
|
| 11 | EPC2001C |
EPC |
Power Transistor |
|
| 12 | EPC2007 |
EPC |
Power Transistor |
|