EPC2202 - EPC

EPC2202 Power Transistor

eGaN® FET DATASHEET EPC2202 - Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 17 mΩ ID , 18 A AEC-Q101 D G S EPC2202 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode prov.

Features

ction-to-Board 4 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 69 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2202 eGaN® FETs are supplied only in passivated die form with solder bars. Die size: 2.1 mm x 1.6 mm Applications
• Lidar/Pulsed Power Applications
• High Power Density DC-DC Converters
• Class-D Audio
• High Intensity Headlamps Benefits
• Ultra High Efficiency
• Ultra Low RD.