EPC2212 - EPC

EPC2212 Power Transistor

eGaN® FET DATASHEET EPC2212 - Automotive 100 V (D-S) Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.5 mΩ ID , 18 A AEC-Q101 D G S EPC2212 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode.

Features

rd 4 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 69 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2212 eGaN® FETs are supplied only in passivated die form with solder bars. Die size: 2.1 x 1.6 mm Applications
• Lidar/Pulsed Power Applications
• High Power Density DC-DC Converters
• Class-D Audio
• High Intensity Headlamps Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra L.