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eGaN® FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A NEW PRODUCT EPC2001 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mob.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EPC2001C |
EPC |
Power Transistor |
|
| 2 | EPC2007 |
EPC |
Power Transistor |
|
| 3 | EPC20 |
ACME |
EPC Cores |
|
| 4 | EPC2010 |
EPC |
Power Transistor |
|
| 5 | EPC2010C |
EPC |
Power Transistor |
|
| 6 | EPC2012 |
EPC |
Power Transistor |
|
| 7 | EPC2012C |
EPC |
Power Transistor |
|
| 8 | EPC2014 |
EPC |
Power Transistor |
|
| 9 | EPC2015 |
EPC |
Power Transistor |
|
| 10 | EPC2015C |
EPC |
Power Transistor |
|
| 11 | EPC2016 |
EPC |
Power Transistor |
|
| 12 | EPC2016C |
EPC |
Power Transistor |
|