EPC2207 - EPC

EPC2207 Power Transistor

eGaN® FET DATASHEET EPC2207 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 22 mΩ ID , 14 A D G S EPC2207 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and z.

Features

tance, Junction-to-Ambient (Note 1) 72 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2207 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 2.9 mm x 0.9 mm Applications
• DC-DC Converters
• BLDC Motor Drives
• Sync Rectification for AC/DC and DC-DC
• Multi-level AC/DC Power Supplies
• Wireless Power
• Solar Micro Inverters
• Robotics
• Class-D Audio Benefits
• Ultra Hi.