EPC2206 |
Part Number | EPC2206 |
Manufacturer | EPC |
Description | eGaN® FET DATASHEET EPC2206 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 2.2 mΩ ID , 90 A AEC-Q101 D G S EPC2206 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s... |
Features |
1.1
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
42
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2206 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 6.05 x 2.3 mm
Applications • 48 V Automotive Power • Open Rack Server Architectures • High Power Density DC-DC Converters • Isolated Power Supplies • Class D Audio • Low Inductance Motor Drive Benefits •... |
Document |
EPC2206 Data Sheet
PDF 1.18MB |
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