EPC2204 - EPC

EPC2204 Power Transistor

eGaN® FET DATASHEET EPC2204 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 6 mΩ ID , 29 A D G S EPC2204 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and ze.

Features

Thermal Resistance, Junction-to-Board 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 64 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2204 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 2.5 x 1.5 mm Applications
• DC-DC Converters
• Isolated DC-DC Converters
• Lidar
• Sync rectification for AC-DC and DC-DC
• Point of Load Converters
• USB-C
• Class.