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eGaN® FET DATASHEET EPC2214 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 20 mΩ ID , 10 A, AEC-Q101 G D S EPC2214 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years. GaN’s exce.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EPC2212 |
EPC |
Power Transistor |
|
| 2 | EPC2215 |
EPC |
Power Transistor |
|
| 3 | EPC2202 |
EPC |
Power Transistor |
|
| 4 | EPC2203 |
EPC |
Power Transistor |
|
| 5 | EPC2204 |
EPC |
Power Transistor |
|
| 6 | EPC2206 |
EPC |
Power Transistor |
|
| 7 | EPC2207 |
EPC |
Power Transistor |
|
| 8 | EPC2 |
Altera Corporation |
Configuration Devices |
|
| 9 | EPC20 |
ACME |
EPC Cores |
|
| 10 | EPC2001 |
EPC |
Power Transistor |
|
| 11 | EPC2001C |
EPC |
Power Transistor |
|
| 12 | EPC2007 |
EPC |
Power Transistor |
|