EPC2204 |
Part Number | EPC2204 |
Manufacturer | EPC |
Description | eGaN® FET DATASHEET EPC2204 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 6 mΩ ID , 29 A D G S EPC2204 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mob... |
Features |
Thermal Resistance, Junction-to-Board
2.5
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
64
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2204 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 2.5 x 1.5 mm
Applications
• DC-DC Converters • Isolated DC-DC Converters • Lidar • Sync rectification for AC-DC and DC-DC • Point of Load Converters • USB-C • Class... |
Document |
EPC2204 Data Sheet
PDF 1.18MB |
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