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EPC2202 |
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| Part Number | EPC2202 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2202 - Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 17 mΩ ID , 18 A AEC-Q101 D G S EPC2202 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s ... |
| Features |
ction-to-Board
4
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
69
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2202 eGaN® FETs are supplied only in passivated die form with solder bars. Die size: 2.1 mm x 1.6 mm
Applications • Lidar/Pulsed Power Applications • High Power Density DC-DC Converters • Class-D Audio • High Intensity Headlamps Benefits • Ultra High Efficiency • Ultra Low RD... |
| Document |
 EPC2202 Data Sheet
PDF 1.05MB |
| Distributor | Stock | Price | Buy |
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