SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous Peak* PC Collector Power Dissipation @ Ta=25 deg C Collector Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range *Single Pulse Pw=100ms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCR.
ob VCB=10V, IE=0 f=1MHz 25 pF VALUE 100 100 6.0 2.0 3.0 1.2 10 150 -55 to +150 UNIT V V V A A W W deg C deg C MIN 100 100 1.0 TYP - MAX 10 3.0 1.5 10 UNIT V V uA mA V K Continental Device India Limited Data Sheet Page 1 of 2 TO-126 (SOT-32) Plastic Package www.DataSheet4U.com C N P A B 1 2 3 DIM A B C D E F G L M N P S MIN. MAX. S D M F E G Packing Detail PACKAGE TO-126 STANDARD PACK Details Net Weight/Qty 500 pcs/polybag 340 gm/500 pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 2.0K Size OUTER CARTON BOX Qty Gr Wt 32.0K 31 kgs 17" x 15" x 13.5" Disclaimer The product informa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD16301Q2 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
2 | CSD16321Q5 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
3 | CSD16321Q5 |
Ciclon |
Power MOSFETs | |
4 | CSD16321Q5C |
Texas Instruments |
N-Channel Power MOSFET | |
5 | CSD16322Q5 |
Texas Instruments |
N-Channel Power MOSFET | |
6 | CSD16323Q3 |
Texas Instruments |
N-Channel Power MOSFET | |
7 | CSD16323Q3 |
Ciclon |
Power MOSFET | |
8 | CSD16325Q5 |
Texas Instruments |
N-Channel Power MOSFET | |
9 | CSD16327Q3 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
10 | CSD16340Q3 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
11 | CSD16342Q5A |
Texas Instruments |
N-Channel Power MOSFET | |
12 | CSD1616 |
Continental Device India Limited |
NPN SILICON EPITAXIAL TRANSISTOR |