The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Drain Gate Top View DDD D Source Bottom View DDD D S VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 14 Gate Charge Gate to Drain 2.5 Drain to Source On Resi.
1
•2 DualCool™ Package SON 5×6mm
• Optimized for Two Sided Cooling
• Optimized for 5V Gate Drive
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant and Halogen Free
APPLICATIONS
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Drain
Gate
Top View DDD D
Source
Bottom View DDD D
S
VDS Qg Qgd
RDS(on)
VGS(th).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD16321Q5 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
2 | CSD16321Q5 |
Ciclon |
Power MOSFETs | |
3 | CSD16322Q5 |
Texas Instruments |
N-Channel Power MOSFET | |
4 | CSD16323Q3 |
Texas Instruments |
N-Channel Power MOSFET | |
5 | CSD16323Q3 |
Ciclon |
Power MOSFET | |
6 | CSD16325Q5 |
Texas Instruments |
N-Channel Power MOSFET | |
7 | CSD16327Q3 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
8 | CSD16301Q2 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
9 | CSD16340Q3 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
10 | CSD16342Q5A |
Texas Instruments |
N-Channel Power MOSFET | |
11 | CSD1638 |
Continental Device India Limited |
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR | |
12 | CSD1616 |
Continental Device India Limited |
NPN SILICON EPITAXIAL TRANSISTOR |