CSD16323Q3 - Texas Instruments

CSD16323Q3 N-Channel Power MOSFET

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On .

Features

•1 Optimized for 5-V Gate Drive
• Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package 2 Applications
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Control or Synchronous FET Applications 3 Description This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 P.