CSD16342Q5A - Texas Instruments

CSD16342Q5A N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. Top View 20 18 16 14 12 10 8 6 4 2 0 0 S1 S2 S3 G4 8D 7D 6D D 5D P0095-01 RDS(ON) vs VGS ID = 20A TC = 25°C TC = 125ºC 12345678 VGS - Gate-to- Source Voltage - V 9 10 G001 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V.

Features

1
•2 Optimized for 5V Gate Drive
• Resistance Rated at VGS = 2.5V
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5mm x 6mm Plastic Package APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Control or Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. Top View 20 18 16 14 12 10 8 6 4 2 0 0 S1 S2 S3 G4 8D 7D .