This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resist.
•1 Optimized for 5 V Gate Drive
• Resistance Rated at VGS =2.5 V
• Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
• Optimized for Control or Synchronous FET Applications
3 Description
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.
Top View
S1
8D
S2
7D
.
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---|---|---|---|---|
1 | CSD16342Q5A |
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2 | CSD16301Q2 |
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3 | CSD16321Q5 |
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4 | CSD16321Q5 |
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5 | CSD16321Q5C |
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6 | CSD16322Q5 |
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7 | CSD16323Q3 |
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8 | CSD16323Q3 |
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9 | CSD16325Q5 |
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10 | CSD16327Q3 |
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