This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package. Top View D1 D 6D D2 5D G3 S . . 4S P0108-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate .
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
2 Applications
• DC-DC Converters
• Battery and Load Management Applications
3 Description
This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.
Top View
D1 D
6D
D2
5D
G3
S
. .
4S
P0108-01
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charg.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD16321Q5 |
Texas Instruments |
25-V N-Channel Power MOSFET | |
2 | CSD16321Q5 |
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3 | CSD16321Q5C |
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4 | CSD16322Q5 |
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5 | CSD16323Q3 |
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6 | CSD16323Q3 |
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7 | CSD16325Q5 |
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8 | CSD16327Q3 |
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9 | CSD16340Q3 |
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10 | CSD16342Q5A |
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