CSD1616 - Continental Device India Limited

CSD1616 NPN SILICON EPITAXIAL TRANSISTOR

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current (DC) IC* Collector Current (Pulse) PC Collector Dissipation Tj, Tstg Operating And Storage Junction Temperature Range *PW=10ms, duty Cycle=50% ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=6.

Features

ft VCE=2V,IC=100mA, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz SWITCHING TIMES ton VCC=10V,IC=100mA Turn on time tstg IB1=IB2=10mA, Storage time tf VBE(off)2=3V Fall time hFE(1)
* CLASSIFICATION Y: 135-270 G: 200-400 VALUE 60 50 6.0 1.0 2.0 0.75 -55 to +150 UNIT V V V A A W deg C MIN 135 81 0.60 100 - TYP 19 MAX 100 100 600 0.70 0.30 1.2 - UNIT nA nA V V V MHz pF L: 300-600 0.07 0.95 0.07 - us us us
*Pulse Test : PW=350us, Duty Cycle=2% Pulsed Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package www.DataSheet4U.com B TO-.