CSD16321Q5 - Texas Instruments

CSD16321Q5 25-V N-Channel Power MOSFET

This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYP.

Features

•1 Optimized for 5-V Gate Drive
• Ultra-Low Qg and Qgd
• Low-Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• SON 5-mm × 6-mm Plastic Package 2 Applications
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
• Optimized for Synchronous FET Applications 3 Description This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charg.