CSD16325Q5 - Texas Instruments

CSD16325Q5 N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 18 Gate Charge Gate to Drain 3.5 Drain to Source On Resistance Th.

Features

1
•2 Optimized for 5V Gate Drive
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package APPLICATIONS
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltag.