AO6409A - Alpha & Omega Semiconductors

AO6409A P-Channel MOSFET

Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -5.5A < 41mW < 53mW < 65.

Features

JL Typ 48 75 37 Max 60 90 45 D S Units V V A W °C Units °C/W °C/W °C/W Rev 4.0: January 2019 www.aosmd.com Page 1 of 5 AO6409A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-20V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±8V VDS=VGS, ID=-250mA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-5.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance .