The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS.
VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www.DataSheet4U.com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -5.0 -4.2 -30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Jun.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AO6400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
2 | AO6401 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
3 | AO6401A |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
4 | AO6402 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
5 | AO6402A |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
6 | AO6402L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
7 | AO6403 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
8 | AO6404 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
9 | AO6405 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
10 | AO6407 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
11 | AO6408 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
12 | AO6409A |
Alpha & Omega Semiconductors |
P-Channel MOSFET |