AO6402A - Alpha & Omega Semiconductors

AO6402A 30V N-Channel MOSFET

The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Product Summary VDS (V) = 30V ID = 7.5A RDS(ON) < 24mΩ RDS(ON) < 3.

Features

Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 54 Max 62.5 110 68 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6402A Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.6A Forward Transconductance Diode Forward Voltage VDS=5V, ID=7.5A IS=1A,VGS=0V C TJ=125° 1.5 64 17.3 25 25 20 0.75 1 2.5 373 VGS=0V, VDS=15V, f=1MHz VGS=0V, V.