AO6403 - Alpha & Omega Semiconductors

AO6403 P-Channel MOSFET

The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration to form a bidirectional blocking switch. AO6403 is Pb-free (meets ROHS & Sony 259 specifications). AO6403L is a Green Product ordering opt.

Features

VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) < 35mΩ (VGS = -10V) RDS(ON) < 58mΩ (VGS = -4.5V) D TSOP6 Top View www.DataSheet4U.com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -6 -5 -30 2 1.44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Am.