The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25.
VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.5 -4.5 -30 2 1.44 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Max.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AO6400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
2 | AO6401 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
3 | AO6401A |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
4 | AO6402 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
5 | AO6402A |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
6 | AO6402L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
7 | AO6403 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
8 | AO6404 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
9 | AO6405 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
10 | AO6408 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
11 | AO6409 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
12 | AO6409A |
Alpha & Omega Semiconductors |
P-Channel MOSFET |