AO6400 - Alpha & Omega Semiconductors

AO6400 N-Channel MOSFET

Product Summary The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 6.9A < 28mΩ < 33mΩ < 52mΩ TSOP6 To.

Features

Max 62.5 110 50 D S Units V V A W °C Units °C/W °C/W °C/W Rev 12: Dec 2011 www.aosmd.com Page 1 of 5 AO6400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, .