The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON).
VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation A B Units V V VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 1.6 1.0 -5 -3.7 ±12 -3.7 -3.2 -25 1.0 0.7 -55 to 150 A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Juncti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AO6401 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
2 | AO6400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
3 | AO6402 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
4 | AO6402A |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
5 | AO6402L |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
6 | AO6403 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
7 | AO6404 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
8 | AO6405 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
9 | AO6407 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
10 | AO6408 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
11 | AO6409 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
12 | AO6409A |
Alpha & Omega Semiconductors |
P-Channel MOSFET |