AO6404 - Alpha & Omega Semiconductors

AO6404 N-Channel MOSFET

• The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. • RoHS and Halogen-Free Compliant Product Summary VDS (V) = 20V ID = 8.6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33.

Features

to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 45 70 33 Max 62.5 110 50 Units °C/W °C/W °C/W Rev.5.0: April 2016 www.aosmd.com Page 1 of 5 AO6404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS BVGSO VGS(th) ID(ON) Gate-Body leakage current Gate-Source Breakdown Voltage .