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AO6409A |
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| Part Number | AO6409A |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load s... |
| Features |
JL
Typ 48 75 37
Max 60 90 45
D
S
Units V V A
W °C
Units °C/W °C/W °C/W
Rev 4.0: January 2019
www.aosmd.com
Page 1 of 5
AO6409A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250mA, VGS=0V VDS=-20V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS= ±8V VDS=VGS, ID=-250mA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-5.5A
RDS(ON)
gFS VSD IS
Static Drain-Source On-Resistance
... |
| Document |
 AO6409A Data Sheet
PDF 247.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AO6409 |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 2 | AO6409L |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 3 | AO6400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 4 | AO6401 |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 5 | AO6401A |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|