Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features · Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation. Package Dimensions unit:mm 2125 [2SK2171] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.
· Adoption of FBET process.
· Large | yfs |.
· Small Ciss.
· High PD allowable power dissipation.
Package Dimensions
unit:mm 2125
[2SK2171]
4.5 1.6
1.5
1.0 2.5 4.25max
Specifications
0.4 0.5
32 1.5 3.0
1
0.75
0.4
1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View)
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current
Symbol
VDSX VGDS
IG ID
Allowable Power Dissipation
PD
Junction Temperature Storage Temperature
Tj Tstg
Conditions Mounted on ceramic board (250mm2× 0.8mm)
Ratings 40
–40 10
100 400 800 150
–55.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK217 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET | |
2 | 2SK2170 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
3 | 2SK2173 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
4 | 2SK2177 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
5 | 2SK2178 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
6 | 2SK2179 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
7 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET | |
9 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2103 |
Rohm |
Small switching Transistors | |
11 | 2SK2108 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2108 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |