Ordering number : ENN4858A 2SK2170 2SK2170 N-Channel Junction Silicon FET Impedance Converter Applications Applications • Low-frequency amplifier, analog switch, constant current source. Features • Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sou.
• Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK217 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET | |
2 | 2SK2171 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
3 | 2SK2173 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
4 | 2SK2177 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
5 | 2SK2178 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
6 | 2SK2179 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
7 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET | |
9 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2103 |
Rohm |
Small switching Transistors | |
11 | 2SK2108 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2108 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |