2SK210 - Toshiba Semiconductor

2SK210 N-Channel MOSFET

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Character.

Features

ing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). http://www.DataSheet4U.net/ Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol IGSS V (BR) GDO IDSS (Note) VGS (OFF) ⎪Yfs⎪ Ciss Crss GPS NF Test Condition VGS = −1.0 V, VDS = 0 V IG = −100 μA VG.