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2SK2171 |
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| Part Number | 2SK2171 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features · Adoption of FBET process. · Large | yfs |. · Small Ciss. ... |
| Features |
· Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation. Package Dimensions unit:mm 2125 [2SK2171] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) Ratings 40 –40 10 100 400 800 150 –55... |
| Document |
 2SK2171 Data Sheet
PDF 178.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK217 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET |
|
| 2 | 2SK2170 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 3 | 2SK2173 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 4 | 2SK2177 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET |
|
| 5 | 2SK2178 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET |
|