SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2179 (F3E50VX2) 500V 3A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION •œ Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : E-pack (Un.
•œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
•œ The static Rds(on) is small.
•œ The switching time is fast. APPLICATION
•œ Switching power supply of AC 100V input
OUTLINE DIMENSIONS
Case : E-pack Case : E-pack
(Unit : mm)
•œ High voltage power supply
•œ Inverter
RATINGS
•œAbsolute Maximum Ratings
• Tc i = 25
•Ž
•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current
• DC
•j i ID Continuous Drain Current
• Peak) i IDP Continuous Source Current
• DC
•j i IS Tot.
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---|---|---|---|---|
1 | 2SK217 |
Hitachi Semiconductor |
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2 | 2SK2170 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
3 | 2SK2171 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
4 | 2SK2173 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
5 | 2SK2177 |
Shindengen Electric Mfg.Co.Ltd |
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6 | 2SK2178 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
7 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET | |
9 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2103 |
Rohm |
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11 | 2SK2108 |
Sanyo Semicon Device |
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12 | 2SK2108 |
Inchange Semiconductor |
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