2SK2173 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z .
ght: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated fail.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK217 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET | |
2 | 2SK2170 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
3 | 2SK2171 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
4 | 2SK2177 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
5 | 2SK2178 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
6 | 2SK2179 |
Shindengen Electric Mfg.Co.Ltd |
Power MOSFET | |
7 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET | |
9 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2103 |
Rohm |
Small switching Transistors | |
11 | 2SK2108 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2108 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |