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2SK2101-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,1Ω 6A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - A.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,1Ω 6A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V G.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |
|
| 3 | 2SK2103 |
Rohm |
Small switching Transistors |
|
| 4 | 2SK2108 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | 2SK2108 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 6 | 2SK2109 |
NEC |
N-Channel MOSFET |
|
| 7 | 2SK211 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | 2SK211 |
Xiao sheng Elctronic |
N-channel MOSFET |
|
| 9 | 2SK2110 |
NEC |
N-Channel MOSFET |
|
| 10 | 2SK2111 |
NEC |
N-Channel MOSFET |
|
| 11 | 2SK2111 |
Kexin |
MOS Field Effect Transistor |
|
| 12 | 2SK2111-HF |
Kexin |
N-Channel MOSFET |
|