2SK2108 - Inchange Semiconductor

2SK2108 N-Channel Mosfet Transistor

·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±30 V ID D.

Features

rrent Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID=1mA IS= 6A;VGS= 0 VGS= 10V; ID= 3A VGS= ±25V;VDS= 0 VDS= 600V; VGS= 0 VDS=20V; VGS=0V; fT=1MHz VGS=10V; ID=3A; VDD=100V; RL=33.3Ω MIN TYPE MAX UNIT 250 V 1.5 2.5 V 1.0 1.5 V 0.5 Ω ±10 µA 100 µA 750 50 pF 130 19 14 ns 70 80 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information conta.