2SK217 - Hitachi Semiconductor

2SK217 Silicon N-Channel Junction FET

2SK217 Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK217 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pch Tch Tstg Ratings –30 20 10 150 150 –55 to +150 Unit V mA mA.

Features

r Dissipation Curve Channel Power Dissipation Pch (mW) 150 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (mA) 8
  –0.2 V 6
  –0.4 4
  –0.6 2
  –0.8
  –1.0 P ch = 0 15 100 W m 50 0 50 100 150 Ambient Temperature Ta (°C) 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8
  –0.2 V 6
  –0.4 4
  –0.6 2
  –0.8
  –1.0 1 2 3 4 Drain to Source Voltage VDS (V) 5 15 Typical Transfer Characteristics 10 VDS = 5 V 5 E D C 0
  –3 0
  –2
  –1 Gate to Source Voltage VGS (V) 0 3 2SK217 Forward Transfer Admittance vs.