Ordering number:ENN4555 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2168 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK2168] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK2168
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK2168] 4.5 1.6 1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on ceramic board (250mm2× 0.8mm)
Electr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET | |
3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK2161 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK2162 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
6 | 2SK2165-01 |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2166-01R |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2167 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK2169 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET | |
12 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET |