2SK2162 - Toshiba Semiconductor

2SK2162 Silicon N-Channel MOS Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S (typ.) • Complementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source volt.

Features

iewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2006-11-21 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Gate-source cutoff current Drain-source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer.