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Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. www.DataSheet4U.com Package Dimensions unit:mm 2063A [2SK2161] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting. www.DataSheet4U.com
Package Dimensions
unit:mm 2063A
[2SK2161]
10.0 3.2
3.5 7.2
4.5 2.8
18.1
16.0
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55
2.4
2.4 0.7
2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25°C
2.55
2.55
1 : Gate 2 : Drain 3 : Source .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET |
|
| 3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 2SK2162 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2165-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2166-01R |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2167 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK2168 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 9 | 2SK2169 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 11 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |
|
| 12 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET |
|