2SK2168 |
Part Number | 2SK2168 |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number:ENN4555 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2168 Ultrahigh-Speed Switching Applications Package Dimensions unit... |
Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2168 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK2168] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Mounted on ceramic board (250mm2× 0.8mm) Electr... |
Document |
2SK2168 Data Sheet
PDF 98.34KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET | |
3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK2161 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK2162 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |