Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SK2166-01R FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,03Ω 40A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteri.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,03Ω 40A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET |
|
| 3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 2SK2161 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | 2SK2162 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 6 | 2SK2165-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 7 | 2SK2167 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK2168 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 9 | 2SK2169 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 11 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |
|
| 12 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET |
|