Ordering number:ENN4556 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2169 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK2169] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications 2.54 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Ga.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK2169
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2087A
[2SK2169]
2.5 1.45 6.9 1.0
4.0 1.0
4.5 1.0
0.9 1
Specifications
2.54
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions PW≤10µs, duty cycle≤1%
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Bre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET | |
3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK2161 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK2162 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
6 | 2SK2165-01 |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2166-01R |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2167 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK2168 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET | |
12 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET |