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2SK216 - Hitachi Semiconductor

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2SK216 Silicon N-Channel MOS FET

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Sou.

Features





• Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch
* Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg 1 Symbol VDSX Ratings 140 160 180 200 ±15 500 500 1.75 30 150
  –45 to +150 Unit V V m.

The same part from a different manufacturer

Datasheet 2SK216 - Renesas Technology 2SK216

2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 .

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